Residual stress gradient of Cr and CrN thin films

D. F. Arias, A. Gómez, R. M. Souza, J. M. Vélez

Producción: Contribución a una revistaArtículorevisión exhaustiva

15 Citas (Scopus)


In this work Cr, CrN thin films were grown by the Magnetron Sputtering technique on monocrystalline silicon (400) substrates. Also, a (Cr/CrN)2 multilayer film was grown in order to compare the values of stress between multilayer and single layers. The total thickness of all films was approximately equal to 1 μm. Structural characterization and residual stress measurements were performed by the grazing X-ray diffraction method and the data were collected at LNLS - Brazilian Synchrotron Light Laboratory. Different angles of incidence were selected in order to obtain values of residual stress at different penetration depths. A linear model of residual stress as a function of the depth profile from experimental data was obtained by using the Laplace transform. Results indicate smaller tensile residual stress at surface and higher stresses at film/substrate interface for the Cr monolayer and for the CrN phase in the (Cr/CrN)2 multilayer. On the contrary, the CrN film presented higher tensile stresses at surface.

Idioma originalInglés
Páginas (desde-hasta)269-276
Número de páginas8
PublicaciónMaterials Chemistry and Physics
EstadoPublicada - 15 ene. 2018


Profundice en los temas de investigación de 'Residual stress gradient of Cr and CrN thin films'. En conjunto forman una huella única.

Citar esto