Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers

I. Hernández-Calderón, J. C. Salcedo-Reyes

Producción: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn0.5Cd0.5Se ordered alloy (CuAu-I type) by ALE is presented.

Idioma originalInglés
Título de la publicación alojada7th International Conference on Low Dimensional Structures and Devices, LDSD 2011
EditorialAmerican Institute of Physics Inc.
Páginas134-137
Número de páginas4
ISBN (versión impresa)9780735412323
DOI
EstadoPublicada - 2014
Evento7th International Conference on Low Dimensional Structures and Devices, LDSD 2011 - Telchac, México
Duración: 22 may. 201127 may. 2011

Serie de la publicación

NombreAIP Conference Proceedings
Volumen1598
ISSN (versión impresa)0094-243X
ISSN (versión digital)1551-7616

Conferencia

Conferencia7th International Conference on Low Dimensional Structures and Devices, LDSD 2011
País/TerritorioMéxico
CiudadTelchac
Período22/05/1127/05/11

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