Modeling of Charge Transport in a Hybrid Metal / Organic / Inorganic Device

Henry Alberto Méndez

Modeling of Charge Transport in a Hybrid Metal / Organic / Inorganic Device

Departamento de Física

Producción: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

Resumen

A Metal I Organic I Inorganic semiconductor heterostructure was built and characterized in situ under ultra-high vacuum conditions (UHV). The aim was to investigate the influence of a perylene-derivative organic thin film on the transport electronic properties of Schottky Ag I GaAs diodes. The device was studied using a combination of photoemission spectroscopy (PES) and electrical measurements. The obtained results were discussed using the analytical expressions of a trapped charge limited current (TCLC) model.

Idioma original	Inglés
Páginas (desde-hasta)	25-32
Número de páginas	8
Publicación	Materials Research Society Symposium Proceedings
Volumen	1029
Estado	Publicada - 2008
Evento	Interfaces in Organic and Molecular Electronics III - Boston, MA, Estados Unidos Duración: 26 nov. 2007 → 30 nov. 2007

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@article{0bc81fa67dac4c68808944db4f899f60,

title = "Modeling of Charge Transport in a Hybrid Metal / Organic / Inorganic Device",

abstract = "A Metal I Organic I Inorganic semiconductor heterostructure was built and characterized in situ under ultra-high vacuum conditions (UHV). The aim was to investigate the influence of a perylene-derivative organic thin film on the transport electronic properties of Schottky Ag I GaAs diodes. The device was studied using a combination of photoemission spectroscopy (PES) and electrical measurements. The obtained results were discussed using the analytical expressions of a trapped charge limited current (TCLC) model.",

author = "M{\'e}ndez, \{Henry Alberto\}",

year = "2008",

language = "English",

volume = "1029",

pages = "25--32",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Interfaces in Organic and Molecular Electronics III ; Conference date: 26-11-2007 Through 30-11-2007",

}

TY - JOUR

T1 - Modeling of Charge Transport in a Hybrid Metal / Organic / Inorganic Device

AU - Méndez, Henry Alberto

PY - 2008

Y1 - 2008

N2 - A Metal I Organic I Inorganic semiconductor heterostructure was built and characterized in situ under ultra-high vacuum conditions (UHV). The aim was to investigate the influence of a perylene-derivative organic thin film on the transport electronic properties of Schottky Ag I GaAs diodes. The device was studied using a combination of photoemission spectroscopy (PES) and electrical measurements. The obtained results were discussed using the analytical expressions of a trapped charge limited current (TCLC) model.

AB - A Metal I Organic I Inorganic semiconductor heterostructure was built and characterized in situ under ultra-high vacuum conditions (UHV). The aim was to investigate the influence of a perylene-derivative organic thin film on the transport electronic properties of Schottky Ag I GaAs diodes. The device was studied using a combination of photoemission spectroscopy (PES) and electrical measurements. The obtained results were discussed using the analytical expressions of a trapped charge limited current (TCLC) model.

UR - https://www.scopus.com/pages/publications/67649386868

M3 - Conference article

AN - SCOPUS:67649386868

SN - 0272-9172

VL - 1029

SP - 25

EP - 32

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Interfaces in Organic and Molecular Electronics III

Y2 - 26 November 2007 through 30 November 2007

ER -

Modeling of Charge Transport in a Hybrid Metal / Organic / Inorganic Device

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