Resumen
A Metal I Organic I Inorganic semiconductor heterostructure was built and characterized in situ under ultra-high vacuum conditions (UHV). The aim was to investigate the influence of a perylene-derivative organic thin film on the transport electronic properties of Schottky Ag I GaAs diodes. The device was studied using a combination of photoemission spectroscopy (PES) and electrical measurements. The obtained results were discussed using the analytical expressions of a trapped charge limited current (TCLC) model.
Idioma original | Inglés |
---|---|
Páginas (desde-hasta) | 25-32 |
Número de páginas | 8 |
Publicación | Materials Research Society Symposium Proceedings |
Volumen | 1029 |
Estado | Publicada - 2008 |
Evento | Interfaces in Organic and Molecular Electronics III - Boston, MA, Estados Unidos Duración: 26 nov. 2007 → 30 nov. 2007 |