Graphene as thin film infrared optoelectronic sensor

Gilgueng Hwang, Juan Camilo Acosta, Emir Vela, Sinan Haliyo, Stéphane Régnier

Producción: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

20 Citas (Scopus)

Resumen

We present the conductometric behavior of a single atomic carbon nanostructure (graphene) that could be promising to infrared optoelectronic applications. A graphene nanomanipulation system with focused infrared laser source for optoelectronic property characterizations is implemented. The feasibility of mechanical and electrical probing manipulations on two-dimensional thin film nanostructures is studied. Using this system, we revealed the infrared optoelectronic properties of mono- and multilayer graphene. The obtained optoelectronic parameters are compared to the single- and multi-walled nanotubes. A graphene infrared sensor is prototyped by direct writing of electrodes using gold nanoink fountain-pen method and is analyzed by electrical probing. Results show that graphene could be a promising building block for thin film optoelectronic devices.

Idioma originalInglés
Título de la publicación alojadaISOT 2009 - International Symposium on Optomechatronic Technologies
Páginas169-174
Número de páginas6
DOI
EstadoPublicada - 2009
Publicado de forma externa
EventoISOT 2009 - International Symposium on Optomechatronic Technologies - Istanbul, Turquía
Duración: 21 sep. 200923 sep. 2009

Serie de la publicación

NombreISOT 2009 - International Symposium on Optomechatronic Technologies

Conferencia

ConferenciaISOT 2009 - International Symposium on Optomechatronic Technologies
País/TerritorioTurquía
CiudadIstanbul
Período21/09/0923/09/09

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