Energy band dispersion in well ordered N,N'-dimethyl-3,4,9,10- perylenetetracarboxylic dlimide films

G. N. Gavrila; H. Mendez; T. U. Kampen; D. R.T. Zahn; D. V. Vyalikh; W. Braun

doi:10.1063/1.1800273

Energy band dispersion in well ordered N,N'-dimethyl-3,4,9,10- perylenetetracarboxylic dlimide films

G. N. Gavrila, H. Mendez, T. U. Kampen, D. R.T. Zahn, D. V. Vyalikh, W. Braun

Producción: Contribución a una revista › Artículo › revisión exhaustiva

36 Citas (Scopus)

Resumen

The electronic properties of well ordered N,N'-dimethyl-3,4,9,10- perylenetetracarboxylic dimide (DiMe-PTCDI) films prepared on sulfur passivated GaAs(001) substrates were studied by means of photoemission spectroscopy. From the photon energy dependence of normal emission spectra an intermolecular energy band dispersion of about 0.2 eV was determined for the highest occupied molecular orbital (HOMO). Simulation of the density of states reveals that the HOMO band has a single π -character. The observed energy band dispersion thus originates from the intermolecular π-π interaction and is modeled using the tight binding model. The analysis provides a value of 0.04 eV for the transfer integral. The inner potential was treated as a fitting parameter such that the expected periodicity of the dispersion in the reciprocal space was obtained.

Idioma original	Inglés
Páginas (desde-hasta)	4657-4659
Número de páginas	3
Publicación	Applied Physics Letters
Volumen	85
N.º	20
DOI	https://doi.org/10.1063/1.1800273
Estado	Publicada - 15 nov. 2004
Publicado de forma externa	Sí

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@article{2e090665111942678296d47ba66b819b,

title = "Energy band dispersion in well ordered N,N'-dimethyl-3,4,9,10- perylenetetracarboxylic dlimide films",

abstract = "The electronic properties of well ordered N,N'-dimethyl-3,4,9,10- perylenetetracarboxylic dimide (DiMe-PTCDI) films prepared on sulfur passivated GaAs(001) substrates were studied by means of photoemission spectroscopy. From the photon energy dependence of normal emission spectra an intermolecular energy band dispersion of about 0.2 eV was determined for the highest occupied molecular orbital (HOMO). Simulation of the density of states reveals that the HOMO band has a single π -character. The observed energy band dispersion thus originates from the intermolecular π-π interaction and is modeled using the tight binding model. The analysis provides a value of 0.04 eV for the transfer integral. The inner potential was treated as a fitting parameter such that the expected periodicity of the dispersion in the reciprocal space was obtained.",

keywords = "ANGLE-RESOLVED PHOTOEMISSION, THIN-FILMS, PHTHALOCYANINE",

author = "Gavrila, {G. N.} and H. Mendez and Kampen, {T. U.} and Zahn, {D. R.T.} and Vyalikh, {D. V.} and W. Braun",

note = "Funding Information: This work was supported by the BMBF (No. 05 KSlOCA∕1) and the EU funded Human Potential Research Training Network DIODE [Contract No. HPRN-CT-1999-00164] for financial support. The authors also thank Hiroyuki Yamane for the fruitful discussions.",

year = "2004",

month = nov,

day = "15",

doi = "10.1063/1.1800273",

language = "English",

volume = "85",

pages = "4657--4659",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

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TY - JOUR

T1 - Energy band dispersion in well ordered N,N'-dimethyl-3,4,9,10- perylenetetracarboxylic dlimide films

AU - Gavrila, G. N.

AU - Mendez, H.

AU - Kampen, T. U.

AU - Zahn, D. R.T.

AU - Vyalikh, D. V.

AU - Braun, W.

N1 - Funding Information: This work was supported by the BMBF (No. 05 KSlOCA∕1) and the EU funded Human Potential Research Training Network DIODE [Contract No. HPRN-CT-1999-00164] for financial support. The authors also thank Hiroyuki Yamane for the fruitful discussions.

PY - 2004/11/15

Y1 - 2004/11/15

N2 - The electronic properties of well ordered N,N'-dimethyl-3,4,9,10- perylenetetracarboxylic dimide (DiMe-PTCDI) films prepared on sulfur passivated GaAs(001) substrates were studied by means of photoemission spectroscopy. From the photon energy dependence of normal emission spectra an intermolecular energy band dispersion of about 0.2 eV was determined for the highest occupied molecular orbital (HOMO). Simulation of the density of states reveals that the HOMO band has a single π -character. The observed energy band dispersion thus originates from the intermolecular π-π interaction and is modeled using the tight binding model. The analysis provides a value of 0.04 eV for the transfer integral. The inner potential was treated as a fitting parameter such that the expected periodicity of the dispersion in the reciprocal space was obtained.

AB - The electronic properties of well ordered N,N'-dimethyl-3,4,9,10- perylenetetracarboxylic dimide (DiMe-PTCDI) films prepared on sulfur passivated GaAs(001) substrates were studied by means of photoemission spectroscopy. From the photon energy dependence of normal emission spectra an intermolecular energy band dispersion of about 0.2 eV was determined for the highest occupied molecular orbital (HOMO). Simulation of the density of states reveals that the HOMO band has a single π -character. The observed energy band dispersion thus originates from the intermolecular π-π interaction and is modeled using the tight binding model. The analysis provides a value of 0.04 eV for the transfer integral. The inner potential was treated as a fitting parameter such that the expected periodicity of the dispersion in the reciprocal space was obtained.

KW - ANGLE-RESOLVED PHOTOEMISSION

KW - THIN-FILMS

KW - PHTHALOCYANINE

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U2 - 10.1063/1.1800273

DO - 10.1063/1.1800273

M3 - Article

AN - SCOPUS:10944238703

SN - 0003-6951

VL - 85

SP - 4657

EP - 4659

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Energy band dispersion in well ordered N,N'-dimethyl-3,4,9,10- perylenetetracarboxylic dlimide films

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