Doping of organic semiconductors: Impact of dopant strength and electronic coupling

Henry Méndez; Georg Heimel; Andreas Opitz; Katrein Sauer; Patrick Barkowski; Martin Oehzelt; Junshi Soeda; Toshihiro Okamoto; Jun Takeya; Jean Baptiste Arlin; Jean Yves Balandier; Yves Geerts; Norbert Koch; Ingo Salzmann

doi:10.1002/anie.201302396

Doping of organic semiconductors: Impact of dopant strength and electronic coupling

Henry Méndez, Georg Heimel, Andreas Opitz, Katrein Sauer, Patrick Barkowski, Martin Oehzelt, Junshi Soeda, Toshihiro Okamoto, Jun Takeya, Jean Baptiste Arlin, Jean Yves Balandier, Yves Geerts, Norbert Koch, Ingo Salzmann

Departamento de Física

Producción: Contribución a una revista › Artículo › revisión exhaustiva

198 Citas (Scopus)

Resumen

Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.

Idioma original	Inglés
Páginas (desde-hasta)	7751-7755
Número de páginas	5
Publicación	Angewandte Chemie - International Edition
Volumen	52
N.º	30
DOI	https://doi.org/10.1002/anie.201302396
Estado	Publicada - 22 jul. 2013

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Premio Nacional Fundación Alejandro Ángel Escobar 2018
Mendez Pinzon, H. A. (Beneficiario), 04 oct. 2018
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Méndez, H., Heimel, G., Opitz, A., Sauer, K., Barkowski, P., Oehzelt, M., Soeda, J., Okamoto, T., Takeya, J., Arlin, J. B., Balandier, J. Y., Geerts, Y., Koch, N., & Salzmann, I. (2013). Doping of organic semiconductors: Impact of dopant strength and electronic coupling. Angewandte Chemie - International Edition, 52(30), 7751-7755. https://doi.org/10.1002/anie.201302396

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abstract = "Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.",

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AU - Opitz, Andreas

AU - Sauer, Katrein

AU - Barkowski, Patrick

AU - Oehzelt, Martin

AU - Soeda, Junshi

AU - Okamoto, Toshihiro

AU - Takeya, Jun

AU - Arlin, Jean Baptiste

AU - Balandier, Jean Yves

AU - Geerts, Yves

AU - Koch, Norbert

AU - Salzmann, Ingo

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KW - doping

KW - electronic structure

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Doping of organic semiconductors: Impact of dopant strength and electronic coupling

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