Domain matched epitaxial growth of (111) Ba0.5Sr0.5TiO3 thin films on (0001) Al2O3 with ZnO buffer layer

P. S. Krishnaprasad, Aldrin Antony, Fredy Rojas, M. K. Jayaraj

Producción: Contribución a una revistaArtículorevisión exhaustiva

7 Citas (Scopus)

Resumen

Epitaxial (111) Ba0.5Sr0.5TiO3 (BST) thin films have been grown by pulsed laser deposition on (0001) Al2O3 substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

Idioma originalInglés
Número de artículo124102
PublicaciónJournal of Applied Physics
Volumen117
N.º12
DOI
EstadoPublicada - 28 mar. 2015
Publicado de forma externa

Huella

Profundice en los temas de investigación de 'Domain matched epitaxial growth of (111) Ba0.5Sr0.5TiO3 thin films on (0001) Al2O3 with ZnO buffer layer'. En conjunto forman una huella única.

Citar esto