Changes in the electronic structure of DiMePTCDI films on S-GaAs(100) upon exposure to oxygen

Gianina Gavrila; Henry Méndez; Thorsten U. Kampen; Dietrich R.T. Zahn

doi:10.1016/j.apsusc.2004.05.261

Changes in the electronic structure of DiMePTCDI films on S-GaAs(100) upon exposure to oxygen

Gianina Gavrila
, Henry Méndez
, Thorsten U. Kampen
, Dietrich R.T. Zahn

Chemnitz University of Technology

Producción: Contribución a una revista › Artículo › revisión exhaustiva

5 Citas (Scopus)

Resumen

The electronic properties of N,N′-dimethyl-3,4,9,10-perylene tetracarboxylic diimide (DiMePTCDI) films deposited on S-GaAs(100) surfaces are studied by ultraviolet photoelectron spectroscopy (UPS). The energy position of the highest occupied molecular orbital (HOMO) of clean DiMePTCDI films is found to be at 2.04 ± 0.10eV with respect to Fermi level. Exposure to oxygen results in a shift of the HOMO from its original position by 0.25 ± 0.10eV towards the middle of the band gap. The shift explains the dramatic decrease of the current in the current-voltage (I-V) characteristics upon oxygen exposure of Ag/DiMePTCDI/S-GaAs(100) Schottky diodes.

Idioma original	Inglés
Páginas (desde-hasta)	126-130
Número de páginas	5
Publicación	Applied Surface Science
Volumen	234
N.º	1-4
DOI	https://doi.org/10.1016/j.apsusc.2004.05.261 https://doi.org/10.1016/J.APSUSC.2004.05.261
Estado	Publicada - 15 jul. 2004
Publicado de forma externa	Sí
Evento	The Ninth International Conference on the Formation of Semicon - Madrid, Espana Duración: 15 sep. 2003 → 19 sep. 2003

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@article{50e375ed7516442aafbb95da0ca74b09,

title = "Changes in the electronic structure of DiMePTCDI films on S-GaAs(100) upon exposure to oxygen",

abstract = "The electronic properties of N,N′-dimethyl-3,4,9,10-perylene tetracarboxylic diimide (DiMePTCDI) films deposited on S-GaAs(100) surfaces are studied by ultraviolet photoelectron spectroscopy (UPS). The energy position of the highest occupied molecular orbital (HOMO) of clean DiMePTCDI films is found to be at 2.04 ± 0.10eV with respect to Fermi level. Exposure to oxygen results in a shift of the HOMO from its original position by 0.25 ± 0.10eV towards the middle of the band gap. The shift explains the dramatic decrease of the current in the current-voltage (I-V) characteristics upon oxygen exposure of Ag/DiMePTCDI/S-GaAs(100) Schottky diodes.",

keywords = "Energy level alignment, Organic materials, Schottky contacts modification",

author = "Gianina Gavrila and Henry M{\'e}ndez and Kampen, \{Thorsten U.\} and Zahn, \{Dietrich R.T.\}",

note = "Funding Information: Financial support by the EU DIODE network (HPRNCT-1999-00164) is gratefully acknowledged.; The Ninth International Conference on the Formation of Semicon ; Conference date: 15-09-2003 Through 19-09-2003",

year = "2004",

month = jul,

day = "15",

doi = "10.1016/j.apsusc.2004.05.261",

language = "English",

volume = "234",

pages = "126--130",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Changes in the electronic structure of DiMePTCDI films on S-GaAs(100) upon exposure to oxygen

AU - Gavrila, Gianina

AU - Méndez, Henry

AU - Kampen, Thorsten U.

AU - Zahn, Dietrich R.T.

N1 - Funding Information: Financial support by the EU DIODE network (HPRNCT-1999-00164) is gratefully acknowledged.

PY - 2004/7/15

Y1 - 2004/7/15

N2 - The electronic properties of N,N′-dimethyl-3,4,9,10-perylene tetracarboxylic diimide (DiMePTCDI) films deposited on S-GaAs(100) surfaces are studied by ultraviolet photoelectron spectroscopy (UPS). The energy position of the highest occupied molecular orbital (HOMO) of clean DiMePTCDI films is found to be at 2.04 ± 0.10eV with respect to Fermi level. Exposure to oxygen results in a shift of the HOMO from its original position by 0.25 ± 0.10eV towards the middle of the band gap. The shift explains the dramatic decrease of the current in the current-voltage (I-V) characteristics upon oxygen exposure of Ag/DiMePTCDI/S-GaAs(100) Schottky diodes.

AB - The electronic properties of N,N′-dimethyl-3,4,9,10-perylene tetracarboxylic diimide (DiMePTCDI) films deposited on S-GaAs(100) surfaces are studied by ultraviolet photoelectron spectroscopy (UPS). The energy position of the highest occupied molecular orbital (HOMO) of clean DiMePTCDI films is found to be at 2.04 ± 0.10eV with respect to Fermi level. Exposure to oxygen results in a shift of the HOMO from its original position by 0.25 ± 0.10eV towards the middle of the band gap. The shift explains the dramatic decrease of the current in the current-voltage (I-V) characteristics upon oxygen exposure of Ag/DiMePTCDI/S-GaAs(100) Schottky diodes.

KW - Energy level alignment

KW - Organic materials

KW - Schottky contacts modification

UR - https://www.scopus.com/pages/publications/3342927885

U2 - 10.1016/j.apsusc.2004.05.261

DO - 10.1016/j.apsusc.2004.05.261

M3 - Article

AN - SCOPUS:3342927885

SN - 0169-4332

VL - 234

SP - 126

EP - 130

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

T2 - The Ninth International Conference on the Formation of Semicon

Y2 - 15 September 2003 through 19 September 2003

ER -

Changes in the electronic structure of DiMePTCDI films on S-GaAs(100) upon exposure to oxygen

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