TY - GEN
T1 - Buffer assisted epitaxial growth of Bi1.5Zn1Nb 1.5O7 thin films by pulsed laser deposition for optoelectronic applications
AU - Sasi, Krishnaprasad
AU - Mailadil, Sebastian
AU - Rojas, Fredy
AU - Antony, Aldrin
AU - Madambi, Jayaraj
PY - 2012
Y1 - 2012
N2 - Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3 with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.
AB - Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3 with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.
UR - http://www.scopus.com/inward/record.url?scp=84870722618&partnerID=8YFLogxK
U2 - 10.1557/opl.2012.1264
DO - 10.1557/opl.2012.1264
M3 - Conference contribution
AN - SCOPUS:84870722618
SN - 9781605114316
T3 - Materials Research Society Symposium Proceedings
SP - 183
EP - 188
BT - Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems
T2 - 2012 MRS Spring Meeting
Y2 - 9 April 2012 through 13 April 2012
ER -