Buffer assisted epitaxial growth of Bi1.5Zn1Nb 1.5O7 thin films by pulsed laser deposition for optoelectronic applications

Krishnaprasad Sasi, Sebastian Mailadil, Fredy Rojas, Aldrin Antony, Jayaraj Madambi

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Resumen

Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3 with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.

Idioma originalInglés
Título de la publicación alojadaNanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems
Páginas183-188
Número de páginas6
DOI
EstadoPublicada - 2012
Publicado de forma externa
Evento2012 MRS Spring Meeting - San Francisco, CA, Estados Unidos
Duración: 09 abr. 201213 abr. 2012

Serie de la publicación

NombreMaterials Research Society Symposium Proceedings
Volumen1454
ISSN (versión impresa)0272-9172

Conferencia

Conferencia2012 MRS Spring Meeting
País/TerritorioEstados Unidos
CiudadSan Francisco, CA
Período09/04/1213/04/12

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