Photoluminescence study of the substitution of Cd by Zn during the growth by atomic layer epitaxy of alternate CdSe and ZnSe monolayers

I. Hernández-Calderón, J. C. Salcedo-Reyes

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present a study of the substitution of Cd atoms by Zn atoms during the growth of alternate ZnSe and CdSe compound monolayers (ML) by atomic layer epitaxy (ALE) as a function of substrate temperature. Samples contained two quantum wells (QWs), each one made of alternate CdSe and ZnSe monolayers with total thickness of 12 ML but different growth parameters. The QWs were studied by low temperature photoluminescence (PL) spectroscopy. We show that the Cd content of underlying CdSe layers is affected by the exposure of the quantum well film to the Zn flux during the growth of ZnSe monolayers. The amount of Cd of the quantum well film decreases with higher exposures to the Zn flux. A brief discussion about the difficulties to grow the Zn0.5Cd0.5Se ordered alloy (CuAu-I type) by ALE is presented.

Original languageEnglish
Title of host publication7th International Conference on Low Dimensional Structures and Devices, LDSD 2011
PublisherAmerican Institute of Physics Inc.
Pages134-137
Number of pages4
ISBN (Print)9780735412323
DOIs
StatePublished - 2014
Event7th International Conference on Low Dimensional Structures and Devices, LDSD 2011 - Telchac, Mexico
Duration: 22 May 201127 May 2011

Publication series

NameAIP Conference Proceedings
Volume1598
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference7th International Conference on Low Dimensional Structures and Devices, LDSD 2011
Country/TerritoryMexico
CityTelchac
Period22/05/1127/05/11

Keywords

  • Atomic layer epitaxy
  • Ordered alloy
  • Photoluminescence
  • Semiconductor Quantum Well

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