Abstract
A Metal I Organic I Inorganic semiconductor heterostructure was built and characterized in situ under ultra-high vacuum conditions (UHV). The aim was to investigate the influence of a perylene-derivative organic thin film on the transport electronic properties of Schottky Ag I GaAs diodes. The device was studied using a combination of photoemission spectroscopy (PES) and electrical measurements. The obtained results were discussed using the analytical expressions of a trapped charge limited current (TCLC) model.
| Original language | English |
|---|---|
| Pages (from-to) | 25-32 |
| Number of pages | 8 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 1029 |
| State | Published - 2008 |
| Event | Interfaces in Organic and Molecular Electronics III - Boston, MA, United States Duration: 26 Nov 2007 → 30 Nov 2007 |