Estudio de mecanismos de transporte eléctrico en películas delgadas de SnO₂

SnO₂ thin films doped with fluorine were studied through conductivity and Hall voltage measurements as a function of the temperature (between 100 K and 600 K). The experimental results were theorically reproduced using the electrical transport model proposed by Seto [1, 2] for polycrystalline semiconductors. It was found that the conductivity is strongly influenced by the mobility at temperatures lower than 440 K, whereas at higher temperatures the dominant transport mechanism is the thermal activation of carries trapped in the grain boundaries.