Doping of organic semiconductors: Impact of dopant strength and electronic coupling

Henry Méndez, Georg Heimel, Andreas Opitz, Katrein Sauer, Patrick Barkowski, Martin Oehzelt, Junshi Soeda, Toshihiro Okamoto, Jun Takeya, Jean Baptiste Arlin, Jean Yves Balandier, Yves Geerts, Norbert Koch, Ingo Salzmann

Research output: Contribution to journalArticlepeer-review

198 Scopus citations

Abstract

Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.

Original languageEnglish
Pages (from-to)7751-7755
Number of pages5
JournalAngewandte Chemie - International Edition
Volume52
Issue number30
DOIs
StatePublished - 22 Jul 2013

Keywords

  • UV/Vis spectroscopy
  • doping
  • electronic structure
  • semiconductors

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