Domain matched epitaxial growth of Bi1.5Zn1Nb 1.5O7 thin films by pulsed laser deposition

P. S. Krishnaprasad; Aldrin Antony; Fredy Rojas; Joan Bertomeu; M. K. Jayaraj

doi:10.1016/j.jallcom.2013.10.025

Domain matched epitaxial growth of Bi_1.5Zn₁Nb _1.5O₇ thin films by pulsed laser deposition

P. S. Krishnaprasad
, Aldrin Antony
, Fredy Rojas
, Joan Bertomeu
, M. K. Jayaraj

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Bi_1.5Zn₁Nb_1.5O₇ (BZN) epitaxial thin films were grown by pulsed laser deposition on Al₂O₃ with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60 twinning for the (2 2 2) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film.

Original language	English
Pages (from-to)	524-528
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	586
DOIs	https://doi.org/10.1016/j.jallcom.2013.10.025
State	Published - 2014
Externally published	Yes

Keywords

Bismuth zinc niobate
Domain matching epitaxy
HRTEM
Pulsed laser deposition

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10.1016/j.jallcom.2013.10.025

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@article{2f6bfb288753419eac3db2db2d2517a7,

title = "Domain matched epitaxial growth of Bi1.5Zn1Nb 1.5O7 thin films by pulsed laser deposition",

abstract = "Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60 twinning for the (2 2 2) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68\% was obtained for the BZN thin films with inter digital capacitors patterned over the film.",

keywords = "Bismuth zinc niobate, Domain matching epitaxy, HRTEM, Pulsed laser deposition",

author = "Krishnaprasad, \{P. S.\} and Aldrin Antony and Fredy Rojas and Joan Bertomeu and Jayaraj, \{M. K.\}",

note = "Funding Information: The authors would like to thank Department of Science and Technology for the financial support, Indo-Spanish joint programme of co-operation in science and technology for HRTEM measurements and Indian Nano Users Program (INUP) for providing the lithography facility.",

year = "2014",

doi = "10.1016/j.jallcom.2013.10.025",

language = "English",

volume = "586",

pages = "524--528",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Domain matched epitaxial growth of Bi1.5Zn1Nb 1.5O7 thin films by pulsed laser deposition

AU - Krishnaprasad, P. S.

AU - Antony, Aldrin

AU - Rojas, Fredy

AU - Bertomeu, Joan

AU - Jayaraj, M. K.

N1 - Funding Information: The authors would like to thank Department of Science and Technology for the financial support, Indo-Spanish joint programme of co-operation in science and technology for HRTEM measurements and Indian Nano Users Program (INUP) for providing the lithography facility.

PY - 2014

Y1 - 2014

N2 - Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60 twinning for the (2 2 2) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film.

AB - Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60 twinning for the (2 2 2) oriented crystals. Sharp intense spots in the SAED pattern also indicate the high crystalline nature of BZN thin film. The Fourier filtered HRTEM images of the BZN-ZnO interface confirms the domain matched epitaxy of BZN with ZnO buffer. An electric field dependent dielectric tunability of 68% was obtained for the BZN thin films with inter digital capacitors patterned over the film.

KW - Bismuth zinc niobate

KW - Domain matching epitaxy

KW - HRTEM

KW - Pulsed laser deposition

UR - https://www.scopus.com/pages/publications/84887145150

U2 - 10.1016/j.jallcom.2013.10.025

DO - 10.1016/j.jallcom.2013.10.025

M3 - Article

AN - SCOPUS:84887145150

SN - 0925-8388

VL - 586

SP - 524

EP - 528

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Domain matched epitaxial growth of Bi_1.5Zn₁Nb _1.5O₇ thin films by pulsed laser deposition

Abstract

Keywords

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