Buffer assisted epitaxial growth of Bi1.5Zn1Nb 1.5O7 thin films by pulsed laser deposition for optoelectronic applications

Krishnaprasad Sasi; Sebastian Mailadil; Fredy Rojas; Aldrin Antony; Jayaraj Madambi

doi:10.1557/opl.2012.1264

Buffer assisted epitaxial growth of Bi_1.5Zn₁Nb _1.5O₇ thin films by pulsed laser deposition for optoelectronic applications

Krishnaprasad Sasi
, Sebastian Mailadil
, Fredy Rojas
, Aldrin Antony
, Jayaraj Madambi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Bi_1.5Zn₁Nb_1.5O₇ (BZN) epitaxial thin films were prepared on Al₂O₃ with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.

Original language	English
Title of host publication	Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems
Pages	183-188
Number of pages	6
DOIs	https://doi.org/10.1557/opl.2012.1264
State	Published - 2012
Externally published	Yes
Event	2012 MRS Spring Meeting - San Francisco, CA, United States Duration: 09 Apr 2012 → 13 Apr 2012

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1454
ISSN (Print)	0272-9172

Conference

Conference	2012 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	09/04/12 → 13/04/12

Access to Document

10.1557/opl.2012.1264

Cite this

Sasi, K., Mailadil, S., Rojas, F., Antony, A., & Madambi, J. (2012). Buffer assisted epitaxial growth of Bi_1.5Zn₁Nb _1.5O₇ thin films by pulsed laser deposition for optoelectronic applications. In Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems (pp. 183-188). (Materials Research Society Symposium Proceedings; Vol. 1454). https://doi.org/10.1557/opl.2012.1264

@inproceedings{108351860d164e5d967d28d0c785f4da,

title = "Buffer assisted epitaxial growth of Bi1.5Zn1Nb 1.5O7 thin films by pulsed laser deposition for optoelectronic applications",

abstract = "Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3 with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.",

author = "Krishnaprasad Sasi and Sebastian Mailadil and Fredy Rojas and Aldrin Antony and Jayaraj Madambi",

year = "2012",

doi = "10.1557/opl.2012.1264",

language = "English",

isbn = "9781605114316",

series = "Materials Research Society Symposium Proceedings",

pages = "183--188",

booktitle = "Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems",

note = "2012 MRS Spring Meeting ; Conference date: 09-04-2012 Through 13-04-2012",

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Sasi, K, Mailadil, S, Rojas, F, Antony, A & Madambi, J 2012, Buffer assisted epitaxial growth of Bi_1.5Zn₁Nb _1.5O₇ thin films by pulsed laser deposition for optoelectronic applications. in Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems. Materials Research Society Symposium Proceedings, vol. 1454, pp. 183-188, 2012 MRS Spring Meeting, San Francisco, CA, United States, 09/04/12. https://doi.org/10.1557/opl.2012.1264

Buffer assisted epitaxial growth of Bi_1.5Zn₁Nb _1.5O₇ thin films by pulsed laser deposition for optoelectronic applications. / Sasi, Krishnaprasad; Mailadil, Sebastian; Rojas, Fredy et al.
Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems. 2012. p. 183-188 (Materials Research Society Symposium Proceedings; Vol. 1454).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Buffer assisted epitaxial growth of Bi1.5Zn1Nb 1.5O7 thin films by pulsed laser deposition for optoelectronic applications

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AU - Mailadil, Sebastian

AU - Rojas, Fredy

AU - Antony, Aldrin

AU - Madambi, Jayaraj

PY - 2012

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N2 - Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3 with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.

AB - Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3 with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.

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M3 - Conference contribution

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